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| STTH1R06 Turbo 2 ultrafast high voltage rectifier Table 1. Main product characteristics IF (AV) VRRM IR (max) Tj VF (typ) trr (max) 1A 600 V 75 A K K A A 175 C 1.0 V 25 ns DO-41 STTH1R06 SMA STTH1R06A Features and benefits A K Ultrafast switching Low reverse recovery current Low thermal resistance Reduces switching and conduction losses Table 2. SMB STTH1R06U Description The STTH1R06, which uses ST Turbo 2 600 V technology, is especially suited as a boost diode in power factor correction circuitry. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications. Table 3. Symbol VRRM IF(RMS) Repetitive peak reverse voltage DO-41 RMS forward voltage Order codes Marking STTH1R06 STTH1R06 HR6 BR6 Part number STTH1R06 STTH1R06RL STTH1R06A STTH1R06U Absolute ratings (limiting values) Parameter Value 600 10 A SMA / SMB DO-41 Tc = 100 C Tc = 125 C Tc = 135 C = 0.5 = 0.5 = 0.5 25 tp = 10ms sinusoidal SMA / SMB Storage temperature range Maximum operating junction temperature 20 -65 to + 175 175 C C A 1 A 7 Unit V IF(AV) Average forward current SMA SMB DO-41 IFSM Tstg Tj Surge non repetitive forward current July 2007 Rev 4 1/9 www.st.com 9 Characteristics STTH1R06 1 Table 4. Symbol Characteristics Thermal resistance Parameter L = 10 mm Rth(j-l) Junction to lead DO-41 SMA SMB Rth(j-a) Junction to ambient (1) 2 Value (max) 45 30 25 70 Unit C/W L = 10 mm (see Figure 14). DO-41 C/W 1. Rth(j-a) is measured with a copper area S = S cm Table 5. Symbol IR Static electrical characteristics Parameter Reverse leakage current Test conditions Tj = 25 C Tj = 150 C Forward voltage drop Tj = 25 C Tj = 150 C VR = VRRM Min. Typ Max. 1 A 10 75 1.7 IF = 1 A V 1.0 1.25 Unit VF To evaluate the conduction losses use the following equation: P = 1.03 x IF(AV) + 0.27 IF2(RMS) Table 6. Symbol Dynamic characteristics Parameter Test conditions IF = 0.5 A Irr = 0.25 A IR =1 A Min. Typ. Max. 25 ns 30 45 100 10 ns V Unit trr Reverse recovery time Tj = 25 C IF = 1 A dIF/dt = -50 A/s VR =30 V dIF/dt = 100 A/s IF = 1 A VFR = 1.1 x VFmax IF = 1 A dIF/dt = 100 A/s VFR = 1.1 x VFmax tfr VFP Forward recovery time Forward recovery voltage Tj = 25 C Tj = 25 C 2/9 STTH1R06 Characteristics Figure 1. P(W) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 Conduction losses versus average Figure 2. forward current IFM(A) = 0.1 = 0.05 = 0.2 = 0.5 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 1.2 0 Forward voltage drop versus forward current Tj=125C (maximum values) Tj=25C (maximum values) Tj=125C (typical values) =1 T IF(AV)(A) 0.2 0.4 0.6 0.8 =tp/T 1.0 tp VFM(V) 1 2 3 4 5 Figure 3. Relative variation of thermal Figure 4. impedance junction to case versus pulse duration (DO-41) 1.0 S = 1cm2 Relative variation of thermal impedance junction to case versus pulse duration (SMA) Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Single pulse = 0.2 = 0.1 = 0.5 Zth(j-c)/Rth(j-c) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 = 0.5 T 0.2 0.1 = 0.2 = 0.1 T tp(s) 1.E+01 0.0 1.E-01 1.E+00 =tp/T 1.E+02 tp 0.0 Single pulse tp(s) 1.E+00 1.E+01 =tp/T 1.E+02 tp 1.E+03 1.E+03 1.E-01 Figure 5. Relative variation of thermal Figure 6. impedance junction to case versus pulse duration (SMB) IRM(A) 9 8 7 VR=400V Tj=125C Peak reverse recovery current versus dIF/dt (typical values) Zth(j-c)/Rth(j-c) 1.0 S = 1cm2 0.9 0.8 0.7 0.6 0.5 = 0.5 IF=2 x IF(AV) IF=IF(AV) 6 IF=0.5 x IF(AV) 5 4 IF=0.25 x IF(AV) 0.4 0.3 = 0.2 3 T 2 1 0 1.E+00 1.E+01 1.E+02 1.E+03 0 50 100 150 200 250 300 350 400 450 500 0.2 0.1 0.0 1.E-01 = 0.1 Single pulse tp(s) =tp/T tp dIF/dt(A/s) 3/9 Characteristics STTH1R06 Figure 7. trr(ns) 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 0 50 Reverse recovery time versus dIF/dt Figure 8. (typical values) Qrr(nC) 250 VR=400V Tj=125C IF=2 x IF(AV) Reverse recovery charges versus dIF/dt (typical values) 225 200 175 VR=400V Tj=125C IF=2 x IF(AV) IF=IF(AV) IF=0.5 x IF(AV) 150 IF=IF(AV) 125 100 75 50 IF=0.5 x IF(AV) dIF/dt(A/s) 100 150 200 250 300 350 400 450 500 25 0 0 50 100 150 dIF/dt(A/s) 200 250 300 350 400 450 500 Figure 9. Reverse recovery softness factor versus dIF/dt (typical values) Figure 10. Relative variations of dynamic parameters versus junction temperature 1.0 0.9 0.8 IRM S factor S factor 6 IF=IF(AV) VR=400V Tj=125C 5 0.7 4 0.6 0.5 QRR 3 0.4 2 0.3 0.2 1 0.1 dIF/dt(A/s) 0 0 50 100 150 200 250 300 350 400 450 500 Tj(C) 25 50 75 IF=IF(AV) VR=400V Reference: Tj=125C 0.0 100 125 Figure 11. Transient peak forward voltage versus dIF/dt (typical values) VFP(V) 25 IF=IF(AV) Tj=125C Figure 12. Forward recovery time versus dIF/dt (typical values) tfr(ns) 200 180 160 140 IF=IF(AV) VFR=1.1 x VF max. Tj=125C 20 15 120 100 10 80 60 5 40 dIF/dt(A/s) 0 0 20 40 60 80 100 120 140 160 180 200 20 0 0 20 40 60 dIF/dt(A/s) 80 100 120 140 160 180 200 4/9 STTH1R06 Characteristics Figure 13. Junction capacitance versus reverse voltage applied (typical values) Figure 14. Thermal resistance junction to ambient versus copper surface under each lead (epoxy FR4, copper thickness = 35 m) (DO-41, SMB) Rth(j-a)(C/W) 110 C(pF) 100 F=1MHz VOSC=30mV Tj=25C 100 90 80 70 60 SMB DO-41 Lleads = 10mm 10 50 40 30 20 VR(V) 1 1 10 100 1000 10 0 0 1 2 3 4 S(cm) 5 6 7 8 9 10 Figure 15. Thermal resistance junction to ambient versus copper surface under each lead (epoxy FR4, copper thickness = 35 m) (SMA) Rth(j-a)(C/W) 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 SMA S(cm) 5/9 Package information STTH1R06 2 Package information Epoxy meets UL94, V0 SMA dimensions Dimensions Ref. E1 Table 7. Millimeters Min. Max. 2.45 0.20 1.65 0.40 2.90 5.35 4.60 1.50 Inches Min. 0.075 0.002 0.049 0.006 0.089 0.189 0.156 0.030 Max. 0.094 0.008 0.065 0.016 0.114 0.211 0.181 0.059 D A1 A2 b 1.90 0.05 1.25 0.15 2.25 4.80 3.95 0.75 E c A1 D E b C L A2 E1 L Figure 16. Footprint, dimensions in mm (inches) 1.4 (0.055) 2.63 (0.103) 1.4 (0.055) 1.64 (0.064) 5.43 (0.214) 6/9 STTH1R06 Table 8. SMB dimensions Package information Dimensions Ref. E1 Millimeters Min. Max. 2.45 0.20 2.20 0.40 3.95 5.60 4.60 1.50 Inches Min. 0.075 0.002 0.077 0.006 0.130 0.201 0.159 0.030 Max. 0.096 0.008 0.087 0.016 0.156 0.220 0.181 0.059 D A1 A2 b 1.90 0.05 1.95 0.15 3.30 5.10 4.05 0.75 E c A1 D E b C L A2 E1 L Figure 17. Footprint, dimensions in mm (inches) 1.62 2.60 (0.064) (0.102) 1.62 (0.064) 2.18 (0.086) 5.84 (0.300) Table 9. DO-41 (glass) dimensions Dimensions Ref. OD OB Millimeters Min. Max. 5.20 2.71 Inches Min. 0.160 0.080 1.102 Max. 0.205 0.107 A C A C 4.07 2.04 28 0.712 B C D 0.863 0.028 0.034 In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 7/9 Ordering information STTH1R06 3 Ordering information Table 10. Ordering information Marking STTH1R06 STTH1R06 HR6 BR6 Package DO-41 DO-41 SMA SMB Weight 0.34 g 0.34 g 0.068 g 0.11 g Base qty 2000 5000 5000 2500 Delivery mode Ammopack Tape and reel Tape and reel Tape and reel Part number STTH1R06 STTH1R06RL STTH1R06A STTH1R06U 4 Revision history Table 11. Date Apr-2003 07-Sep-2004 24-Feb-2005 Revision history Revision 1 2 3 First issue DO-41 and SMA packages added SMA package dimensions update. Reference A1 max. changed from 2.70 mm (0.106 inches) to 2.03 mm (0.080 inches). Reformatted to current standards. Added cathode bars to cover illustrations. Updated dimensions and footprint illustrations for SMA and SMB packages. Corrected part number in Table 10. Description of changes 02-Jul-2007 4 8/9 STTH1R06 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 9/9 |
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